Navitas’ 650 V GaN portfolio includes a new line of high-power GaN FETs, alongside advanced GaNSafe™ power ICs, which ...

Abstract: When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial ...

Abstract: This paper proposes a compact microwave rectifier achieving a fractional bandwidth of 162.7% using a double-voltage rectification circuit. The impedance matching section was designed with ...