Abstract: Presents corrections to the paper, (Corrections to “Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs”).

Newspaper headlines are often filled with global issues such as climate change and the greenhouse effect, which naturally raise questions like: How can we model ...

Abstract: Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of ...

Scientists are like prospectors, excavating the natural world seeking gems of knowledge about physical reality. And in the century just past, scientists have dug deep enough to discover that reality’s ...

SXS—Simulating eXtreme Spacetimes—is an ongoing scientific collaboration that has been generating simulations of dramatic ...

The new scholastic year always begins with sharpened pencils, fresh copybooks, and familiar debates about how children learn ...

reflects his excitement at the discovery, which enabled him to calculate the distance of the galaxy from Earth ... “He was an amazing character with an amazing variety of interests,” says Hasan ...

This accomplishment can significantly improve data center efficiency and drive innovations in LiDAR, sensing, and quantum tech. Microcombs Shrink Lab-Grade Precision Onto a Chip  The researchers ...

Peer ReviewDownload a summary of the editorial decision process including editorial decision letters, reviewer comments and author responses to feedback. RNA viruses induce the formation of ...