Abstract: Presents corrections to the paper, (Corrections to “Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs”).

Newspaper headlines are often filled with global issues such as climate change and the greenhouse effect, which naturally raise questions like: How can we model ...

SXS—Simulating eXtreme Spacetimes—is an ongoing scientific collaboration that has been generating simulations of dramatic ...

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This accomplishment can significantly improve data center efficiency and drive innovations in LiDAR, sensing, and quantum tech. Microcombs Shrink Lab-Grade Precision Onto a Chip  The researchers ...

In February 2024, a shipwreck off Tobago caused a significant surface oil spill, highlighting the need for accurate modeling ...

School of Civil and Hydraulic Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China Chongqing Key Laboratory of Disaster Prevention, and Reduction in Power ...