Abstract: We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes ...

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Abstract: A 2.5 THz fourth harmonic mixer using an antiparallel gallium arsenide Schottky diode pair is demonstrated. Full-wave simulation is utilized to model the diode's parasitics, study loop ...

Researchers from the Sivas Cumhuriyet University, Atatürk University, and Eskişehir Osmangazi University in Turkey have grown silicon-doped AlN films on sapphire substrates using MOVPE to make ...