Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI ...

Abstract: When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial ...

Abstract: This paper proposes a compact microwave rectifier achieving a fractional bandwidth of 162.7% using a double-voltage rectification circuit. The impedance matching section was designed with ...