Abstract: GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power ...

Abstract: This article proposes a 2.5-D wideband amplifying frequency-selective rasorber (AFSR). First, a 2.5-D antenna-circuit-antenna frequency-selective surface (FSS) based on the conventional 2-D ...

One such device to recently arrive is Analog Devices' MAX74810, a chopper-stabilized, dual-channel, zero-drift op amp with ...

STMicroelectronics is aiming at industrial and telecom power supplies with half-bridge driver for GaN power transistors. With a maximum rail voltage of 220V, STDRIVEG211, as it will be known, is ...

Last week, I waxed rhapsodic about why we wrench (the joy of solving problems, making choices, doing things our own way, ...

President Donald Trump has suggested that TV networks that give him "bad publicity" should be stripped of their licences, raising questions about the administration's authority to do so. "I mean, they ...