Abstract: GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power ...

Abstract: Inductive power transfer (IPT) with high order compensation circuit is an efficient approach to improve the transmission performance of the system. However, the matching of the circuit ...

STMicroelectronics is aiming at industrial and telecom power supplies with half-bridge driver for GaN power transistors. With a maximum rail voltage of 220V, STDRIVEG211, as it will be known, is ...