Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Center of Materials Science and Optoelectronics Engineering, ...

Abstract: A root-cause analysis of thermal power saturation in broad area diode lasers is presented. Thermal power saturation limits in largest parts the optical power in continuous wave (CW) driven ...

Abstract: A prism-based self-injection locked seamlessly tunable blue InGaN/GaN laser diode composite cavity system is presented. A rigorous analysis of this external cavity diode laser (ECDL) system ...

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