Abstract: Presents corrections to the paper, (Corrections to “Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs”).

Abstract: Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of ...

Scientists are like prospectors, excavating the natural world seeking gems of knowledge about physical reality. And in the century just past, scientists have dug deep enough to discover that reality’s ...

The new scholastic year always begins with sharpened pencils, fresh copybooks, and familiar debates about how children learn ...

SXS—Simulating eXtreme Spacetimes—is an ongoing scientific collaboration that has been generating simulations of dramatic ...

This article, originally titled "The Man Who Discovered the Universe," is from the Summer 2025 issue of Air & Space Quarterly ...

This accomplishment can significantly improve data center efficiency and drive innovations in LiDAR, sensing, and quantum tech. Microcombs Shrink Lab-Grade Precision Onto a Chip  The researchers ...

Peer ReviewDownload a summary of the editorial decision process including editorial decision letters, reviewer comments and author responses to feedback. RNA viruses induce the formation of ...

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