资讯

Electronics Weekly3 年

X-Fab adds 375V nmos and pmos super-junction ... - Electronics Weekly

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
EDN15 年

VLSI: Intel’s 32-nm process ready for RF - EDN

In a paper, Intel says the NMOS portion of technology achieves an fT of 420-GHz. A low-leakage 30pA/um NMOS achieves an fT of 218-GHz. When adding inductors and resistors to the mix, the process now ...
Electronics Weekly3 年

X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...